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Journal Publications 

Total Publications (94): Journals (48), Conferences (42), Book Chapters (04)

                                                                     

                                                       

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(2026

48. Optimizing Carrier Dynamics and Charge Extraction in FA-Based Tin Perovskites Through Dominant Band Offset Engineering Over Doping, IEEE Transactions on Electron Devices, (2026). (IF: 3.22) (Just Accepted)

47. Engineered Earth-Abundant Cu2BaSn(S,Se)4 Thin Films for Indoor Energy HarvestingSolar Energy, 308, 114398, (2026). (IF: 6.6).

 

 

(2025

 

46. Advanced Bandgap Grading Techniques for High-Efficiency FA-Based Tin Perovskite Solar Cells, Solar Energy Materials and Solar Cells, 292, 113791(2025). (IF: 6.3)

45. Insights into the Potential of Sb alloyed Cu2AgBiI6-based Solar Cells: For Efficient Indoor Energy-Harvesting, Solar Energy, 286, 113188, (2025). (IF: 6.6)

44. Enhancement of Functionalized 1T-NbS2 Monolayer Properties for the Superior Anode of Na-ion BatteriesIEEE Transactions on Nanotechnology, (2025). (IF: 2.4)

43. DFT-Based Accurate and Efficient Bandgap Prediction of CsSnI3-xBrx and Parameter Optimization for Enhanced Perovskite Solar Cell Performance, Physica B: Condensed Matter, 697, 416693. (2025) (IF: 2.8)

 

 

(2024

42. Unveiling the Potential of Cs3Sb2ClxI9-x-based Solar Cells for Efficient Indoor Light Harvesting,: Numerical Simulation, Advanced Theory, and Simulations, 7, 2400128, (2024). (IF: 3.3)

41. Investigating ASnI2Br wide bandgap tin perovskite for bifacial solar cells: Modeling of bifacial efficiency with comparative analysis, Solar Energy, 283, 113017, (2024). (IF: 6.0)

40. A DFT Study of the Adsorption Behavior and Sensing Properties of CO gas on Monolayer MoSe2 in CO2 rich environmentJournal of Molecular Modeling, 4, 250, (2024), (IF: 2.2)

39. Comprehensive modeling of high-performance all-inorganic Cs2TiBr6-based perovskite solar cells,  Physica Status Solidi B: Basic Solid State Physics, 261, 2400247, (2024) (IF: 2.8)

38. Exploring multi-level ETL and HTL Configurations for High-Efficiency lead-free Cs2AgBiBr6 Double Perovskite Solar Cells: A Design and Simulation Study, Energy Technology, 12, 2400578, (2024). (IF: 3.8 

37. Bandgap Engineering of Earth-abundant Cu2BaSn(S1-xSex)4 for Improved Photovoltaic Performance: A Systematic Approach to Double Grading, Solar Energy Materials and Solar Cells, 269,112792, (2024). (IF: 6.9)

36. Elucidating the potential strategies for performance improvement of CBTSSe-based solar cells: A pathway towards 20% efficiencyEnergy Technology, 2301198, (2024). (IF: 3.8 

35. DFT calculations for temperature stable quantum capacitance of VS2 based electrodes for supercapacitorsIEEE Transactions on Nanotechnology, 23, 132-138, (2024). (IF: 2.4)

34. Unraveling the Potential Pathways for Improved Performance of EDA0.01(GA0.06(FA0.8Cs0.2)0.94)0.98SnI2Br-based Solar CellsEnergy Technology, 2300876, (2024).  (IF: 3.8

 

(2023)

33. Unveiling the Potential of Bismuth Oxy-Iodide (BiOI) based Photovoltaic Device for Indoor Light Harvesting, IEEE Transactions on Electron Devices, 70, 10, 5690-5695, (2023). (IF: 3.22

32. Comparative Analysis of Gate Structure Dependent FET-Based Biosensor, Materials Today  Communications  35, 106301, (2023). (IF: 3.8 

31.  Effect of Introducing Defects and Doping on Different Properties of Monolayer MoS2Physica Status Solidi B: Basic Solid State Physics, 260, 9. (2023). (IF: 2.8 

30. Performance Assessment of Pocket Tunnel FET and Accumulation Mode FET for Detection of Streptavidin ProteinPhysica Scripta, 98, 11, 115002, (2023).  (IF: 2.9

29.   DFT study about the effect of doping on the properties of GaSb material and designing of a high-efficiency infrared photodetectorPhysica Status Solidi B: Basic Solid State Physics, 260, 230299. (2023). (IF: 2.8 

28. Growth optimization and DFT investigation of doping effect on properties of VS2 monolayer crystals, The European Physical Journal B,  96, 160, (2023). (IF: 1.6

27. Theoretical investigation of electronic, optical properties of doped and defective MoSe2 monolayers, Bulletin of Materials Science, 46, 121, (2023). (IF: 1.89

(2022)                                              

26.  Design Analysis of Ohmic Junction Based Tunnel FET, Silicon, 1-8, (2022). (IF: 2.94

​25.  Design Investigation of Charge Plasma Tunnel FET with Vertical Source, Silicon, 12-18, (2022). (IF: 2.94)                                                                                                                                                        

(2021)                                                                             

24. Improving the Cu2ZnSn(S,Se)4-based photovoltaic conversion efficiency by back contact modification, IEEE Transactions on Electron Devices, 66, 6, 2748-2752, (2021). (IF: 3.22

23. Insights into the sputter-instigated valence plasmon oscillations in CIGSe thin films, Surfaces and Interfaces Interfaces, 25, 101146, (2021). (IF: 6.2)

22. Numerical Simulation: Design of high-efficiency planar p–n homojunction perovskite solar cells”, IEEE Transactions on Electron Devices, 68, 5, 2360-2364, (2021). (IF: 3.22)

21. A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor Based Biosensor IEEE Sensors, 21, 3, 3201-3209, (2021). (IF: 4.32) 

20. Numerical simulation of novel lead-free Cs3Sb2Br9 absorber-based highly efficient perovskite solar cell", Optical Materials, 112, 111715, (2021). (IF: 3.9).     

 

(2020)                                                                                         

19. Investigation of DIBS-deposited CdZnO/ZnO-based Multiple Quantum Well for Large-area Photovoltaic Application”, IEEE Transactions on Electron Devices, 67, 12, 5587-5592, (2020). (IF: 3.22

18. Analytical Performance Analysis of CdZnO/ZnO-based Multiple Quantum Well Solar Cell.” IEEE Transactions on Electron Devices, 67, 3. 1047-1051, (2020). (IF: 3.22).       

[ACS Applied Materials & Interfaces (01); Solar Energy Materials and Solar Cells (02); Solar Energy (06); IEEE Transactions on Electron Devices (07); IEEE Sensors (01); IEEE Transactions on Nanotechnology (02); Applied Physics Letters (02); Surfaces and Interfaces (01); Advanced Theory and Simulations (01); Journal of Applied Physics (03); JPD: Applied Physics (02); RSC Advances (02); Optical Materials (03); Semiconductor Science Technology: IOP (01Silicon: Springer (02); The European Journal Physical B (01), Bulletin of Materials Science (01); Physica Status Solidi: B (03); Materials Today Communications (01); Physica Scripta (01); Physica B: Condensed Matter (01)Energy Technology (03); Journal of Molecular Modelling (01)

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© 2023 by O2A all rights reserved.

Postal Address

Dr. Vivek Garg

Assistant Professor

EC 007N, New Building,

Department of Electronics Engineering

S.V. National Institute of  Technology (NIT)

Surat-395007, Gujarat, India        

Contact Information

Phone: +91-261-220 1707

Emailvivekg@eced.svnit.ac.in; 

       vivekgarg0101@gmail.com

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