Optoelectronics2Application (O2A)
 Research Group 

 

Journal Publications 

Total Publications (75): Journals (37), Conferences (34), Book Chapters (04)

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​( 2024 )

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37. Bandgap Engineering of Earth-abundant Cu2BaSn(S1-xSex)4 for Improved Photovoltaic Performance: A Systematic Approach to Double Grading, Solar Energy Materials and Solar Cells, 269, 112792, (2024). (IF: 6.9)

36. Elucidating the potential strategies for performance improvement of CBTSSe-based solar cells: A pathway towards 20% efficiency, Energy Technology, 2301198, (2024). (IF: 3.8)  

35. DFT calculations for temperature stable quantum capacitance of VS2 based electrodes for supercapacitors, IEEE Transactions on Nanotechnology, 23, 132-138, (2024). (IF: 2.4)

34. Unraveling the Potential Pathways for Improved Performance of EDA0.01(GA0.06(FA0.8Cs0.2)0.94)0.98SnI2Br-based Solar Cells, Energy Technology, 2300876, (2024).  (IF: 3.8) 

 

( 2023 )

33. Unveiling the Potential of Bismuth Oxy-Iodide (BiOI) based Photovoltaic Device for Indoor Light Harvesting, IEEE Transactions on Electron Devices, 70, 10, 5690-5695, (2023). (IF: 3.22) 

32. Comparative Analysis of Gate Structure Dependent FET-Based Biosensor, Materials Today  Communications  35, 106301, (2023). (IF: 3.8)  

31.  Effect of Introducing Defects and Doping on Different Properties of Monolayer MoS2, Physica Status Solidi B: Basic Solid State Physics, 260, 9. (2023). (IF: 2.8)  

30. Performance Assessment of Pocket Tunnel FET and Accumulation Mode FET for Detection of Streptavidin Protein,  Physica Scripta, 98, 11, 115002, (2023).  (IF: 2.9) 

29.   DFT study about the effect of doping on the properties of GaSb material and designing of a high-efficiency infrared photodetector,  Physica Status Solidi B: Basic Solid State Physics, 260, 230299. (2023). (IF: 2.8)  

28. Growth optimization and DFT investigation of doping effect on properties of VS2 monolayer crystals, The European Physical Journal B,  96, 160, (2023). (IF: 1.6) 

27. Theoretical investigation of electronic, optical properties of doped and defective MoSe2 monolayers, Bulletin of Materials Science, 46, 121, (2023). (IF: 1.89) 

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( 2022 )                                              

26.  Design Analysis of Ohmic Junction Based Tunnel FET, Silicon, 1-8, (2022). (IF: 2.94) 

​25.  Design Investigation of Charge Plasma Tunnel FET with Vertical Source, Silicon, 12-18, (2022).

(IF: 2.94)                                                                                                                                                               

 

( 2021 )                                                                             

24. Improving the Cu2ZnSn(S,Se)4-based photovoltaic conversion efficiency by back contact modification, IEEE Transactions on Electron Devices, 66, 6, 2748-2752, (2021). (IF: 3.22) 

23. Insights into the sputter-instigated valence plasmon oscillations in CIGSe thin films, Surfaces and Interfaces Interfaces, 25, 101146, (2021). (IF: 6.2)

22. Numerical Simulation: Design of high-efficiency planar p–n homojunction perovskite solar cells”, IEEE Transactions on Electron Devices, 68, 5, 2360-2364, (2021). (IF: 3.22)

21. A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor Based Biosensor” IEEE Sensors, 21, 3, 3201-3209, (2021). (IF: 4.32) 

20. Numerical simulation of novel lead-free Cs3Sb2Br9 absorber-based highly efficient perovskite solar cell", Optical Materials, 112, 111715, (2021). (IF: 3.9).     

 

( 2020 )                                                                                         

19. Investigation of DIBS-deposited CdZnO/ZnO-based Multiple Quantum Well for Large-area Photovoltaic Application”, IEEE Transactions on Electron Devices, 67, 12, 5587-5592, (2020). (IF: 3.22) 

18. Analytical Performance Analysis of CdZnO/ZnO-based Multiple Quantum Well Solar Cell.” IEEE Transactions on Electron Devices, 67, 3. 1047-1051, (2020). (IF: 3.22).                                                                                 

( 2019 )   

17. Analytical Study of Performance Parameters of InGaN/GaN Multiple Quantum Well Solar Cell, IEEE Transactions on Electron Devices, 66 (8), 3399-3404, (2019). (IF: 3.22)  

16. Investigation of valence plasmon excitations in GMZO thin film and their suitability for plasmon-enhanced buffer-less solar cells, Solar Energy, 178, 114-124, (2019). (IF: 7.18)  

15. Investigation of valance electron excitation and plasmonic enhancement in sputter grown NMZO thin films: For energy harvesting applications, Optical Materials, 88, 372-377, (2019). (IF: 3.9)

14. Resistive switching in reactive electrode-based memristor: Engineering bulk defects and interface inhomogeneity through bias characteristics, Semiconductor Science and Technology, 34, 3, 035014, (2019). (IF: 2.35)                                                                                                                                                               

( 2018 )                                                                                                               

13. Investigation of dual-ion beam sputter-instigated plasmon generation in TCOs: A case study of GZO, ACS Applied Materials and Interfaces, 10, 5464−5474, (2018). (IF: 10.38)  

12. Sputter-instigated plasmon-enhanced optical backscattering layer in ultrathin solar cells: Application of GZO in CIGSe material system, Solar Energy, 174, 35, (2018). (IF:7.18) 

11. Surface layer investigation of dual ion beam sputtered Cu2ZnSn (S,Se)4 thin film for open-circuit voltage improvement, Journal of Physics D: Applied Physics, 51, 31LT01, 18, (2018). (IF: 3.40)

10. Band alignment of Cd-free (Zn,Mg)O layer with Cu2ZnSn(S,Se)4 and its effect on the photovoltaic properties,Optical Materials, 84, 351102, 1-10 (2018). (IF: 3.75)                                                                                                                                                                                                                                

( 2017 )

9. Impact of sputter-instigated plasmonic features in TCO films: for ultrathin photovoltaic applications, Applied Physics Letters, 110 (10): 103903, (2017). (IF: 3.97)

8. Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering, Applied Physics Letters, 110(25): 3509, (2017). (IF: 3.97)

7. Optoelectronic properties of phosphorous-doped p-type ZnO films grown by dual ion beam sputtering, Journal of Applied Physics, 121(22): 225306, (2017). (IF: 2.87)                                                                                                                                                                                                                                     

( 2016 )

6. Localized surface plasmon resonance on Au nanoparticles: tuning and exploitation for performance enhancement in ultrathin photovoltaics, RSC Advances, 6, 26216, (2016). (IF: 4.03)

5. Growth and characterization of dual ion beam sputtered Cu2ZnSn(S,Se)4 thin films for cost-effective photovoltaic application, Solar Energy, 139: 1-12 (2016). (IF: 7.18)

4. Plasmon generation in sputtered Ga-doped MgZnO thin films for solar cell applications, Journal of Applied Physics, 119, 233101 (2016). (IF: 2.87).   

3. Investigation of barrier inhomogeneities and interface state density in Au/MgZnO: Ga Schottky contact, Journal of Physics D: Applied Physics, 49, 445303 (2016). (IF:3.40)                                                                                                                                                                                                                               

( 2015 )

2. Band alignment and photon extraction studies of Na-doped MgZnO/Ga-doped ZnO heterojunction for light-emitter applications, Journal of Applied Physics, 118, 165301, (2015). (IF: 2.87)

1. Detection of a high photoresponse at zero bias from a highly conducting ZnO: Ga based UV photodetector, RSC Advances, 5, 62603, (2015). (IF: 4.03).